Semiconductor device and method for manufacturing the same

A semiconductor device comprising an active region and a passive region surrounding the active region, the semiconductor device further comprising:

• a substrate;
• and
• a source, a gate, and a drain located on one side of the substrate, the gate located between the source and the drain;
• wherein the gate comprises a first end portion and an intermediate portion, the intermediate portion, the source, and the drain all located in the active region, and the first end portion located in the passive region;
• wherein the first end portion comprises a first sub end portion and a second sub end portion, wherein, in a first direction, an extension width of the first sub end portion is greater than that of the intermediate portion, wherein an extension width of the second sub end portion is greater than that of the first sub end portion, and wherein the first direction is parallel to the direction in which the source points to the drain;
• wherein the first sub end portion is bent toward one side of the source and/or one side of the drain;
• and
• wherein the second sub end portion is bent toward one side of the source and/or one side of the drain.