Back to results
US 12,615,831 B2Granted
Semiconductor device
AssigneeRenesas Electronics Corporation
InventorSatoru Tokuda
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a trench formed in an n-type semiconductor substrate, a p-type body region, an n-type source region, a field plate electrode formed at a lower portion of the trench, and a gate electrode formed at an upper portion of the trench. A gate potential is to be supplied to the gate electrode, a source potential is to be supplied to the source region and the body region, and a drain potential is to be supplied to the semiconductor substrate. A potential larger than the source potential and smaller than the drain potential is to be supplied to the field plate electrode.
Claims8
A semiconductor device comprising:
- a semiconductor substrate of a first conductivity type, the semiconductor substrate having an upper surface and a lower surface;
- a trench formed in the semiconductor substrate and reaching a predetermined depth from the upper surface of the semiconductor substrate;
- a body region of a second conductivity type opposite to the first conductivity type, the body region being formed in the semiconductor substrate so as to be shallower than a depth of the trench in cross-sectional view;
- a source region of the first conductivity type, the source region being formed in the body region;
- a field plate electrode formed inside the trench at a lower portion of the trench;
- a gate electrode formed inside the trench at an upper portion of the trench and electrically insulated from the field plate electrode;
- a first insulating film formed inside the trench between the semiconductor substrate and the field plate electrode;
- and
- a gate insulating film formed inside the trench between the semiconductor substrate and the gate electrode, wherein
- a gate potential is to be supplied to the gate electrode, wherein
- a source potential is to be supplied to each of the source region and the body region, wherein
- a drain potential is to be supplied to the semiconductor substrate, wherein a first potential larger than the source potential and smaller than the drain potential is to be supplied to the field plate electrode, wherein
- a thickness of the first insulating film is smaller than twice a thickness of the gate insulating film, wherein
- the first potential is closer to the drain potential than to the gate potential.
11 more elements
A semiconductor device comprising:
- a semiconductor substrate of a first conductivity type, the semiconductor substrate having an upper surface and a lower surface;
- a trench formed in the semiconductor substrate and reaching a predetermined depth from the upper surface of the semiconductor substrate;
- a body region of a second conductivity type opposite to the first conductivity type, the body region being formed in the semiconductor substrate so as to be shallower than a depth of the trench in cross-sectional view;
- a source region of the first conductivity type, the source region being formed in the body region;
- a field plate electrode formed inside the trench at a lower portion of the trench;
- a gate electrode formed inside the trench at an upper portion of the trench and electrically insulated from the field plate electrode;
- a first insulating film formed inside the trench between the semiconductor substrate and the field plate electrode;
- a gate insulating film formed inside the trench between the semiconductor substrate and the gate electrode;
- and
- a MOSFET including the semiconductor substrate, the trench, the gate insulating film, the gate electrode, the first insulating film, the field plate electrode, the body region, and the source region,
- wherein a gate potential is to be supplied to the gate electrode,
- wherein a source potential is to be supplied to each of the source region and the body region,
- wherein a drain potential is to be supplied to the semiconductor substrate,
- wherein a first potential larger than the source potential and smaller than the drain potential is to be supplied to the field plate electrode,
- wherein a thickness of the first insulating film is smaller than twice a thickness of the gate insulating film, and
- wherein the first potential to be supplied to the field plate electrode at a time of an OFF operation of the MOSFET is different from the first potential to be supplied to the field plate electrode at a time of an ON operation of the MOSFET.
13 more elements
Dependencies are inferred from the claim text.