US 12,615,829 B2 · Semiconductor device with field plate structures

Abstract

A semiconductor device includes a source region and a drain region formed on a substrate; a gate structure formed between the source region and the drain region; a field insulating layer formed between the gate structure and the drain region; a first field plate structure formed on the field insulating layer, formed on a same plane and material as the gate structure; a source metal wiring connected to the source region, the first field plate structure, and the second field plate structure; a drain metal wiring connected to the drain region; and an interlayer insulating layer formed under the source metal wiring and the drain metal wiring; and a second field plate structure formed on the interlayer insulating layer, formed between the first field plate structure and the drain region, and formed of a material different from a material of the first field plate structure.

Claims14

Dependent claims

A semiconductor device, comprising:

a source region and a drain region formed to be spaced apart from each other on a substrate;
a gate structure formed between the source region and the drain region on the substrate;
a field insulating layer formed between the gate structure and the drain region;
a first field plate structure disposed on the field insulating layer, on a same plane as the gate structure, and formed of a same material as the gate structure;
a first interlayer insulating layer formed on the first field plate structure;
a second field plate structure disposed on the first interlayer insulating layer, between the first field plate structure and the drain region, and comprising a material different from the material of the first field plate structure;
a first source metal wiring connected to the source region, the first field plate structure, and the second field plate structure;
and
a drain metal wiring connected to the drain region.

6 more elements

A semiconductor device, comprising:

a first drift region of a first conductivity type disposed on a semiconductor layer and a first deep well region of a second conductivity type;
a field insulating layer disposed on the first drift region;
a body region disposed adjacent of the first drift region and spaced apart from the field insulating layer;
a source region disposed in the body region;
a drain region disposed above the first deep well region in the first drift region;
a gate structure disposed on portions of the field insulating layer, the first drift region, the body region, and the source region;
a first field plate structure disposed on the field insulating layer, on a same plane as the gate structure, and formed of a same material as a material of the gate structure;
a first interlayer insulating layer disposed on the field insulating layer, the gate structure, and the first field plate structure;
a second field plate structure disposed on the first interlayer insulating layer between the first field plate structure and the drain region, and formed of a material different from a material of the first field plate structure;
a first source metal wiring connected to the source region, the first field plate structure, and the second field plate structure;
and
a drain metal wiring connected to the drain region.

9 more elements

Dependencies are inferred from the claim text.

Semiconductor device with field plate structures

Life of this patent

Semiconductor device with field plate structures

Life of this patent

Abstract

Claims14