Body contact FET
AssigneeSkyworks Solutions, Inc.
InventorsHailing Wang, Guillaume Alexandre Blin, David Scott Whitefield
Life of this patent
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Abstract
A field-effect transistor (FET) and a radio-frequency module are provided comprising an active region comprising a source region, a drain region, a body region disposed between the source region and the drain region, a first body extension portion in contact with the body region, a second body extension portion in contact with the body region, and a body contact region in contact with the first extension portion and the second extension portion; and a gate disposed on a top surface of the body region. A die is also provided comprising two or more such FETs.
Claims18
A field-effect transistor comprising:
- an active region comprising a source region, a drain region, a body region disposed between the source region and the drain region, a first body extension portion in contact with the body region, a second body extension portion in contact with the body region, and a body contact region in contact with the first body extension portion and the second body extension portion, the source region and the body contact region being in contact with each other, the body contact region having a first side in contact with the first body extension portion, a second side in contact with the second body extension portion, and a third side in contact with the source region, and the source region having a first side in contact with the first body extension portion, a second side in contact with the second body extension portion, and a third side in contact with the body region;
- and
- a gate disposed on a top surface of the body region.
A die comprising a first and second field-effect transistor, the first and second field-effect transistor each comprising;
- an active region comprising a source region, a drain region, a body region disposed between the source region and the drain region, a first body extension portion in contact with the body region, a second body extension portion in contact with the body region, and a body contact region in contact with the first body extension portion and the second body extension portion;
- a third field-effect transistor and a fourth field-effect transistor, the first and second field-effect transistors sharing a first common body contact region and being disposed on either side of the first common body contact region, the third and fourth field-effect transistors sharing a second common body contact region and being disposed on either side of the second common body contact region, and the first, second, third and fourth field-effect transistors sharing a common second body extension portion;
- and
- a gate disposed on a top surface of the body region.
Dependencies are inferred from the claim text.