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US 12,615,821 B2Granted
Memory array and method used in forming a memory array comprising strings of memory cells
AssigneeMicron Technology, Inc.
InventorsJohn D. Hopkins, Nancy M. Lomeli
Life of this patent
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Abstract
A memory array comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. A ring is around individual of the channel-material strings in at least one of a lowest of the conductive tiers or a lowest of the insulative tiers. Individual of the rings have a top that is below all of the memory cells. Other embodiments are disclosed.
Claims16
A memory array comprising:
- laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers, channel-material strings of memory cells extending through the insulative tiers and the conductive tiers;
- and
- a ring around individual of the channel-material strings in at least one of a lowest of the conductive tiers or a lowest of the insulative tiers, individual of the rings having a top that is below all of the memory cells, fewer-than-all of the channel-material strings having one of the rings there-around.
Dependencies are inferred from the claim text.