IGBT device with electrode pads of varied shape to discriminate pads in chip operation and testing

A semiconductor device, comprising:

• a first electrode;
• a first semiconductor region located on the first electrode, the first semiconductor region being of a first conductivity type;
• a second semiconductor region located on the first semiconductor region, the second semiconductor region being of a second conductivity type;
• a third semiconductor region located on the second semiconductor region, the third semiconductor region being of the first conductivity type;
• a fourth semiconductor region located on a portion of the third semiconductor region, the fourth semiconductor region being of the second conductivity type;
• a first control electrode facing the second, third, and fourth semiconductor regions via a first insulating film;
• a second control electrode separated from the first control electrode in a second direction perpendicular to a first direction, the first direction being from the first electrode toward the first semiconductor region, the second control electrode being electrically isolated from the first control electrode, the second control electrode facing the second and third semiconductor regions via a second insulating film;
• a second electrode positioned above the third and fourth semiconductor regions, the second electrode being electrically connected with the third and fourth semiconductor regions;
• a first electrode pad electrically connected with the first control electrode;
• and
• a second electrode pad electrically connected with the second control electrode, the second electrode pad having a different planar shape from the first electrode pad.