Gate-all-around integrated circuit structures having vertically discrete source or drain structures

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a vertical arrangement of horizontal nanowires;
• a gate stack around the vertical arrangement of horizontal nanowires;
• a first epitaxial source or drain structure at a first end of the vertical arrangement of horizontal nanowires, the first epitaxial source or drain structure comprising vertically discrete portions aligned with the vertical arrangement of horizontal nanowires, the vertically discrete portions vertically overlapping with and discontinuous from one another;
• a second epitaxial source or drain structure at a second end of the vertical arrangement of horizontal nanowires, the second epitaxial source or drain structure comprising vertically discrete portions aligned with the vertical arrangement of horizontal nanowires, the vertically discrete portions vertically overlapping with and discontinuous from one another;
• a sub-fin structure beneath the vertical arrangement of horizontal nanowires and beneath the first and second epitaxial source or drain structures, wherein a bottommost one of the vertically discrete portions of the first epitaxial source or drain structure is in contact with the sub-fin structure;
• a first conductive contact structure surrounding the vertically discrete portions of the first epitaxial source or drain structure;
• and
• a second conductive contact structure surrounding the vertically discrete portions of the second epitaxial source or drain structure.