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US 12,615,809 B2Granted
Semiconductor device and method for fabricating the same
AssigneeSK hynix Inc.
InventorsIl Do Kim, Ji Hee Yu, Seung Bum Kim
Life of this patent
Estimating the term…
Abstract
A semiconductor device may include: a lower structure; a horizontal layer spaced apart from the lower structure and extending along a direction parallel to the lower structure; a vertical conductive line extending along a direction perpendicular to the lower structure and coupled to a first side end of the horizontal layer; a data storage element coupled to a second side end of the horizontal layer; and a horizontal conductive line extending along a direction crossing the horizontal layer and including a sloped side facing the vertical conductive line.
Claims20
A semiconductor device comprising:
- a lower structure;
- a horizontal layer spaced apart from the lower structure and extending along a direction parallel to the lower structure;
- a vertical conductive line extending along a direction perpendicular to the lower structure and coupled to a first side end of the horizontal layer;
- a data storage element coupled to a second side end of the horizontal layer;
- and
- a horizontal conductive line extending along a direction crossing the horizontal layer wherein the horizontal conductive line includes a sloped side facing the vertical conductive line and upper and lower horizontally-oriented flat surfaces.
3 more elements
Dependencies are inferred from the claim text.