Semiconductor device and method of manufacturing semiconductor device
AssigneeSK hynix Inc.
InventorNam Jae Lee
Life of this patent
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Abstract
A semiconductor device may include a silicide gate electrode that is disposed over a substrate, a first epitaxial pattern that protrudes from the substrate, a second epitaxial pattern that protrudes from the substrate, a silicide source contact that is connected to the substrate through the first epitaxial pattern and that is disposed at a level different from a level of the silicide gate electrode, and a silicide drain contact that is connected to the substrate through the second epitaxial pattern and that is disposed at a level different from the level of the silicide gate electrode.
Claims17
A semiconductor device comprising:
- a silicide gate electrode that is disposed over a substrate;
- a first epitaxial pattern that protrudes from the substrate;
- a second epitaxial pattern that protrudes from the substrate;
- a silicide source contact that is connected to the substrate through the first epitaxial pattern and that is disposed at a first level different from a top level of the silicide gate electrode;
- a silicide drain contact that is connected to the substrate through the second epitaxial pattern and that is disposed at a second level different from the top level of the silicide gate electrode;
- and
- an insulating spacer that surrounds a sidewall of the silicide gate electrode,
- wherein at least one of the first epitaxial pattern and the second epitaxial pattern has a greater height than the silicide gate electrode,
- wherein the insulating spacer has a greater height than the silicide gate electrode, and
- wherein the insulating spacer has a greater height than at least one of the first epitaxial pattern and the second epitaxial pattern.
A semiconductor device comprising:
- a silicide gate electrode that is disposed over a substrate and that is a metal silicide layer;
- an insulating spacer that surrounds a sidewall of the silicide gate electrode;
- a first epitaxial pattern that is disposed on the substrate and that has a greater height than the silicide gate electrode;
- a second epitaxial pattern that is disposed on the substrate and that has a greater height than the silicide gate electrode;
- a silicide source contact that is disposed on the first epitaxial pattern;
- and
- a silicide drain contact that is disposed on the second epitaxial pattern,
- wherein the insulating spacer has a greater height than the silicide gate electrode, and
- wherein the insulating spacer has a greater height than at least one of the first epitaxial pattern and the second epitaxial pattern.
A semiconductor device comprising:
- a silicide gate electrode that is disposed over a substrate;
- an insulating spacer that surrounds a sidewall of the silicide gate electrode;
- a first epitaxial pattern that is disposed on the substrate and that has a greater height than the silicide gate electrode;
- a second epitaxial pattern that is disposed on the substrate and that has a greater height than the silicide gate electrode;
- a silicide source contact that is disposed on the first epitaxial pattern;
- and
- a silicide drain contact that is disposed on the second epitaxial pattern,
- wherein the insulating spacer has a greater height than the silicide gate electrode, the first epitaxial pattern, and the second epitaxial pattern.
Dependencies are inferred from the claim text.