Technologies for transistors with a ferroelectric gate dielectric

A device comprising:

• a source;
• a drain;
• a channel between the source and the drain;
• a gate electrode;
• and
• a gate dielectric between the gate electrode and the channel, wherein the gate dielectric is ferroelectric,
• wherein the gate dielectric is a first perovskite material, wherein the channel is a second perovskite material,
• wherein the gate dielectric comprises lead, zirconium, titanium, and oxygen, wherein the channel comprises barium, tin, and oxygen,
• wherein the gate electrode comprises strontium, ruthenium, and oxygen.

A device comprising:

• a transistor comprising:
• a source;
• a drain;
• a channel between the source and the drain;
• a gate electrode;
• and
• a gate dielectric between the gate electrode and the channel, wherein the gate dielectric is ferroelectric,
• wherein a threshold voltage of the transistor is less than 0.5 volts,
• wherein the gate electrode has a work function such that the gate dielectric switches polarization in response to a change of voltage applied to the gate electrode from above the threshold voltage to zero voltage.