Square etch profiles in heterogenous materials of integrated circuit devices
AssigneeIntel Corporation
InventorsMekha George, Seda Cekli, Kilhyun Bang, Krishna Ganesan
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Abstract
Materials and techniques for recessing heterogenous materials in integrated circuit (IC) dies. In an example, a method includes receiving a plurality of adjoining structures over a substrate. The structures comprise first and second outer sidewalls comprising a first material. An inner material and an intervening material is between the first and second outer sidewalls. The inner material is recessed with a first etch to a recess depth. A surface of the first or second outer sidewall is revealed to the recess depth by etching the intervening material with a second etch.
Claims20
A method, comprising:
- receiving a plurality of adjoining structures over a substrate, wherein the structures comprise:
- first and second outer sidewalls comprising a first material, the outer sidewalls substantially parallel with each other;
- an inner material between the first and second outer sidewalls;
- and
- an intervening material between the first and second outer sidewalls;
- recessing, with a first etch, the inner material to a recess depth, wherein the first etch comprises a cyclical etch process;
- and
- revealing a surface of the first or second outer sidewall to the recess depth by etching the intervening material with a second etch, wherein the second etch comprises a non-cyclical etch.
A method, comprising:
- receiving a plurality of adjoining structures over a substrate, wherein the structures comprise:
- first and second outer sidewalls comprising a first material, the outer sidewalls substantially parallel with each other;
- an inner material between the first and second outer sidewalls, wherein the inner material comprises predominantly silicon and oxygen;
- and
- an intervening material between the first and second outer sidewalls;
- recessing, with a first etch, the inner material to a recess depth;
- and
- revealing a surface of the first or second outer sidewall to the recess depth by etching the intervening material with a second etch.
A method, comprising:
- receiving a plurality of adjoining structures over a substrate, wherein the structures comprise:
- first and second outer sidewalls comprising a first material, the outer sidewalls substantially parallel with each other;
- an inner material between the first and second outer sidewalls;
- and
- an intervening material between the first and second outer sidewalls;
- recessing, with a first etch, the inner material to a recess depth;
- and
- revealing a surface of the first or second outer sidewall to the recess depth by etching the intervening material with a second etch, wherein the second etch comprises a hydrogen precursor.
Dependencies are inferred from the claim text.