Metal-insulator-metal (MIM) capacitor module

A method, comprising:

• forming a lower metal layer including a bottom electrode;
• forming a dielectric region over the lower metal layer;
• patterning and etching the dielectric region to form a tub opening and a bottom electrode contact opening in the dielectric region, each of the tub opening and bottom electrode contact opening exposing an upper surface of the bottom electrode;
• depositing a conformal metal over the dielectric region, the deposited conformal metal (a) filling the bottom electrode contact opening to form a vertically-extending bottom electrode contact structure and (b) partially filling the tub opening;
• performing a metal etch process that removes (a) portions of the conformal metal over the dielectric region and (b) the conformal metal in the tub opening, wherein the metal etch process also forms a recess in an upper portion of the vertically-extending bottom electrode contact structure that defines a recessed region of the vertically-extending bottom electrode contact structure, the recessed region having a vertical depth;
• depositing an insulator layer over the dielectric region and forming an insulator cup structure in the tub opening, the insulator cup structure including a laterally extending insulator cup structure base formed on the bottom electrode and a vertically-extending insulator cup structure sidewall;
• depositing a top electrode metal over the insulator layer and extending into an opening defined by the insulator cup structure;
• performing a planarization process to remove (a) upper portions of the top electrode metal, (b) upper portions of the insulator layer, (c) a partial vertical thickness of the dielectric region, and (d) an upper portion of the vertically-extending bottom electrode contact structure in the bottom electrode contact opening, wherein the planarization process extends vertically below the vertical depth of the recessed region of the vertically-extending bottom electrode contact structure;
• wherein after the planarization process, a remaining portion of the insulator layer defines an insulator cup, a remaining portion of the top electrode metal defines a top electrode, and a remaining portion of the vertically-extending bottom electrode contact structure defines a vertically-extending bottom electrode contact;
• and
• wherein the planarization process defines a planarized surface including a top surface of the insulator cup, a top surface of the top electrode, and a top surface of the vertically-extending bottom electrode contact;
• and
• forming an upper metal layer on the planarized surface, the upper metal layer including (a) a bottom electrode connection element electrically connected to the vertically-extending bottom electrode contact and (b) a top electrode connection element electrically connected to the top electrode.