Semiconductor structure having bit line support structure and manufacturing method thereof

A method for manufacturing a semiconductor structure, comprising:

• providing a substrate, forming bit line structures extending along a first direction on the substrate, and forming initial support pattern structures extending along a second direction on the substrate, wherein each of the initial support pattern structures runs through top regions of the bit line structures, and the first direction intersects with the second direction;
• filling an initial protective layer in a gap between adjacent bit line structures;
• and
• removing part of the initial protective layer to form a conductive hole, wherein the conductive hole is located between adjacent initial support pattern structures, and forming a conductive plug structure in the conductive hole;
• wherein operations of forming the bit line structures and forming the initial support pattern structures comprise:
• stacking a first conductive material layer, a barrier material layer, a second conductive material layer and a first dielectric material layer sequentially on the substrate;
• forming the initial support pattern structures on the first dielectric material layer, wherein a first groove is provided between adjacent initial support pattern structures;
• forming second dielectric layers, wherein each of the second dielectric layers fills at least the first groove;
• and
• removing part of the second dielectric layers, part of the first dielectric material layer, part of the second conductive material layer, part of the barrier material layer and part of the first conductive material layer to form the bit line structures, wherein initial support pattern structures located between adjacent bit line structures are suspended in midair;
• and
• wherein an operation of forming the second dielectric layers comprises:
• forming a second dielectric material layer, wherein the second dielectric material layer covers an upper surface of each of the initial support pattern structures and fills each first groove;
• and
• taking each of the initial support pattern structures as a stop layer, removing part of the second dielectric material layer by a dry etching process or a planarization process, wherein remaining second dielectric material layer constitutes the second dielectric layers.