Semiconductor storage device

A semiconductor storage device, comprising:

• at least one or more planes;
• a plurality of conductive layers and a plurality of insulation layers that are alternately stacked in a first direction (Z direction);
• a first contact plug that contacts a first conductive layer included in the plurality of conductive layers, and extends in the first direction, the first conductive layer being formed at an outside of an insulation layer configured to electrically separate the planes;
• a second contact plug that contacts a second conductive layer that is a conductive layer directly above the first conductive layer of the plurality of conductive layers, and extends in the first direction through the first conductive layer, the second conductive layer being formed at an outside of the insulation layer configured to electrically separate the planes;
• and
• wherein the second contact plug includes a second conductor layer, and an insulation layer that is provided between the second conductor layer and the first conductive layer and insulates the second conductor layer and the first conductive layer.