Three dimensional semiconductor device having a back-gate electrode
AssigneesSK hynix Inc., Industry-University Cooperation Foundation Hanyang University
InventorsIn Ku Kang, Chang Han Kim, Yun Heub Song, Jae Min Sim
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Abstract
A three dimensional semiconductor device is disclosed. The tree dimensional semiconductor device includes a word line stack over a substrate and a channel pillar structure passing through the word line stack in a vertical direction perpendicular to a top surface of the substrate. The channel pillar structure includes a channel structure. The channel structure includes a blocking layer, a trap layer, a tunneling layer, a channel layer, a filling layer, and a back gate electrode. The channel structure has a pillar shape.
Claims19
A three dimensional semiconductor device, comprising:
- a word line stack over a substrate;
- and
- a channel pillar structure passing through the word line stack in a vertical direction perpendicular to a top surface of the substrate,
- wherein the channel pillar structure includes a channel structure,
- wherein the channel structure includes a blocking layer, a trap layer, a tunneling layer, a channel layer, a filling layer, and a back gate electrode,
- wherein the channel structure has a pillar shape,
- wherein the channel pillar structure further includes a pad structure over the channel structure,
- wherein the pad structure includes a back gate electrode pad formed over and electrically connected to the back gate electrode, and
- wherein the back gate electrode pad has an offset and eccentric shape with respect to the channel structure in a top view.
Dependencies are inferred from the claim text.