Semiconductor device and manufacturing method of semiconductor device
AssigneeSK hynix Inc.
InventorJung Hyeong Kim
Life of this patent
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Abstract
A semiconductor device may include a gate structure including a first conductive layer, a second conductive layer, and a third conductive layer, the third conductive layer being disposed between the first conductive layer and the second conductive layer and thicker than the first conductive layer and the second conductive layer, channel structures passing through the gate structure, and an isolation structure including a first portion passing through the second conductive layer and extended into the channel structures and a second portion protruding from the first portion into the third conductive layer and disposed between the channel structures.
Claims19
A semiconductor device comprising:
- a gate structure including a first conductive layer, a second conductive layer, and a third conductive layer, the third conductive layer being disposed between the first conductive layer and the second conductive layer and thicker than the first conductive layer and the second conductive layer;
- channel structures passing through the gate structure;
- and
- an isolation structure including a first portion passing through the second conductive layer and extended into the channel structures and a second portion protruding from the first portion into the third conductive layer and disposed between neighboring channel structures.
A semiconductor device comprising:
- a gate structure including a first conductive layer, a second conductive layer and a third conductive layer, the third conductive layer being disposed between the first conductive layer and the second conductive layer, wherein the third conductive layer is thicker than the first conductive layer and the second conductive layer;
- a channel structure passing through the gate structure and including an etched surface;
- and
- an isolation structure including an insulating pattern passing through the second conductive layer and the third conductive layer, and an insulating spacer disposed between the etched surface of the channel structure and the insulating pattern.
Dependencies are inferred from the claim text.