Three-dimensional NAND memory device with reduced resistance-capacitance delay
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsZhong Zhang, Zhongwang Sun, Wenxi Zhou, Zhiliang Xia, Zhi Zhang
Life of this patent
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Abstract
A semiconductor device is provided that can include a stack formed of word line layers and insulating layers that are alternatingly stacked over a substrate. A first staircase of a first block can be formed in the stack and extend between first array regions of the first block. A second staircase of a second block can be formed in the stack and extend between second array regions of the second block. The semiconductor device further can have a connection region that is formed in the stack between the first staircase and second staircase.
Claims20
A semiconductor device, comprising:
- a stack of alternating word line layers and insulating layers;
- a first block having a first staircase that is formed in the stack and extends between first array regions;
- a second block having a second staircase that is formed in the stack and extends between second array regions;
- and
- channel structures that are formed in the first and second array regions and extend through the stack, wherein:
- the first staircase has stairs declining in a first lateral direction and a second lateral direction that is perpendicular to the first lateral direction, and
- the first staircase is spaced apart from the second staircase along the second lateral direction.
A semiconductor device, comprising:
- a stack of alternating word line layers and insulating layers;
- a first block having a first staircase that is formed in the stack and extends between first array regions;
- a second block having a second staircase that is formed in the stack and extends between second array regions;
- a connection region positioned between the first staircase and the second staircase;
- and
- channel structures that are formed in the first and second array regions and extend through the stack, wherein:
- the first staircase has stairs declining in a first lateral direction, and
- the first staircase is spaced apart from the second staircase along a second lateral direction that is perpendicular to the first lateral direction.
Dependencies are inferred from the claim text.