Multi-stack nanosheet structure including semiconductor device

A multi-stack nanosheet structure comprising:

• a substrate;
• at least a first nanosheet structure and at least a second nanosheet structure above the substrate separated from each other;
• a channel structure comprising a first portion on the first nanosheet structure, a second portion on the second nanosheet structure, and a central portion on the substrate between the first and second portions, wherein the first portion, the central portion and the second portion form a single continuous structure;
• and
• at least a first source/drain region on the first nanosheet structure, and at least a second source/drain region on the second nanosheet structure,
• wherein the channel structure comprises an n-type or p-type dopant, and
• wherein the first source/drain region and the second source/drain region comprise a dopant having a polarity opposite to the n-type or p-type dopant in the channel structure.

A multi-stack nanosheet structure comprising:

• a substrate;
• at least a first nanosheet structure and at least a second nanosheet structure above the substrate separated from each other;
• and
• at least a first source/drain region on the first nanosheet structure, and at least a second source/drain region on the second nanosheet structure, wherein the second source/drain region comprises a lower-second source/drain region and an upper-second source/drain region,
• a gate structure;
• a first source/drain region contact plug on the lower-second source/drain region or the upper-second source/drain region which comprises an n-type or p-type dopant;
• a second source/drain region contact plug on the lower-second source/drain region or the upper-second source/drain region which comprises the n-type or p-type dopant;
• and
• a substrate contact plug on the gate structure,
• wherein the substrate comprises the n-type or p-type dopant, and
• wherein the first source/drain region and the second source/drain region comprise a dopant having a polarity opposite to the n-type or p-type dopant in the substrate.