Memory comprising a gate conductive layer having a bent portion and manufacturing method thereof
AssigneeChangxin Memory Technologies, Inc.
InventorChihcheng Liu
Life of this patent
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Abstract
The present disclosure discloses a memory and a manufacturing method thereof. The memory includes: active regions extending in a first direction and word lines extending in a second direction, wherein each of the word lines is partially located between adjacent active regions; the word line includes a gate conductive layer; and, in a direction parallel to the first direction, each of the active regions has an end face facing the word lines, and an extreme difference in distances between the end face and the gate conductive layer is within a preset range.
Claims19
A memory, comprising:
- a plurality of active regions extending along a first direction and an isolation structure between the active regions;
- and
- a plurality of word lines extending along a second direction, wherein the first direction is not perpendicular to the second direction and intersects with the second direction;
- wherein each of the word lines comprises a gate conductive layer and a gate dielectric layer, the gate dielectric layer is extending from the active regions to the isolation structure with a straight boundary along the second direction, the boundary is located on a side opposite the gate conductive layer;
- and
- the gate conductive layer of a given one of the word lines comprises a bent portion located in the isolation structure, a thickness of the gate dielectric layer at the bent portion is non-uniform, the thickness of the gate dielectric layer at the bent portion is complementary to the bent portion for forming the straight boundary.
A method for manufacturing a memory, comprising:
- providing a plurality of active regions extending along a first direction and a recess extending along a second direction, an isolation structure being arranged between the active regions, wherein the first direction is not perpendicular to the second direction and intersects with the second direction;
- and
- forming a word line in the recess, wherein the word line comprises a gate dielectric layer and a gate conductive layer, the gate dielectric layer is extending from the active regions to the isolation structure with a straight boundary along the second direction, the boundary is located on a side opposite the gate conductive layer;
- and
- the gate conductive layer of the word line comprises a bent portion located in the isolation structure, a thickness of the gate dielectric layer at the bent portion is non- uniform, the thickness of the gate dielectric layer at the bent portion is complementary to the bent portion for forming the straight boundary.
Dependencies are inferred from the claim text.