Semiconductor device structure with air gap and method for preparing the same
AssigneeNanya Technology Corporation
InventorChih-Wei Huang
Life of this patent
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Abstract
A semiconductor device structure includes a semiconductor substrate, a first fin structure, a first S/D structure, and a bit line contact. The first fin structure is protruding from the semiconductor substrate, and have a first sidewall, a second sidewall, and a top surface connecting the first sidewall to the second sidewall. The first S/D structure is disposed over the first fin structure, and covering the top surface, a portion of the first sidewall, and a portion of the second sidewall of the first fin structure. The bit line contact is disposed over the first S/D structure. The bit line contact includes a barrier layer in contact with the first S/D structure and a conductive layer disposed over the barrier layer.
Claims12
A semiconductor device structure, comprising:
- a semiconductor substrate;
- a first fin structure protruding from the semiconductor substrate, having a first sidewall, a second sidewall, and a top surface connecting the first sidewall to the second sidewall;
- a first source/drain (S/D) structure disposed over the first fin structure, covering the top surface, a portion of the first sidewall, and a portion of the second sidewall of the first fin structure;
- and
- a bit line contact disposed over the first S/D structure, comprising:
- a barrier layer in contact with the first S/D structure;
- and
- a conductive layer disposed over the barrier layer;
- wherein the barrier layer comprises:
- two side portions;
- and
- a bottom portion connecting one of the two side portions to another one of the two side portions,
- wherein a thickness of the bottom portion is greater than a thickness of the two side portions.
Dependencies are inferred from the claim text.