Semiconductor structure and method for forming the same with multiple gate conductive layers having different characteristics

A semiconductor structure, comprising:

• a gate structure located on a substrate, the gate structure comprising at least two gate conductive layers;
• a first gate dielectric layer and a second gate dielectric layer;
• and
• a first semiconductor layer and a first conductor layer, which are located on a surface of the at least two gate conductive layers;
• wherein the substrate comprises a source and a drain, wherein at least one of the source or the drain comprises:
• a first doped region and a second doped region which is located on a surface of the first doped region,
• wherein a work function of the second gate dielectric layer is less than a work function of the second doped region;
• and
• the at least two gate conductive layers have same components and different characteristic parameters;
• and the characteristic parameters comprise at least one of thickness, component content or shape, wherein components in each of the at least two gate conductive layers comprise a nitrogen component and a metal component, and wherein a concentration of the nitrogen component is different in different gate conductive layers.