Method of manufacturing semiconductor structure and semiconductor structure

A method of manufacturing a semiconductor structure, comprising:

• providing an initial structure, wherein the initial structure comprises a substrate and a plurality of initial word line structures buried in the substrate and parallel to each other, and each of the initial word line structures comprises an initial conductive structure;
• removing part of the substrate and parts of the initial word line structures, and forming isolation trenches, wherein a remaining part of the substrate is isolated by the isolation trenches to form a plurality of active area structures independent of each other, the active area structures cover first parts of the initial word line structures, and the isolation trenches expose second parts of the initial word line structures;
• and
• removing part of the initial conductive structure in each of the second parts of the initial word line structures, wherein bottom surfaces of the initial conductive structures covered by the active area structures are lower than a bottom surface of a remaining part of the initial conductive structure in each of the second parts of the initial word line structures.