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US 12,615,754 B2Granted
Semiconductor device including buried word line
AssigneeNanya Technology Corporation
InventorHsih-Yang Chiu
Life of this patent
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Abstract
A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate, a first word line, a bit line, and a first capacitor. The substrate has a first surface and a second surface opposite to the first surface. The first word line is disposed within the substrate. The bit line is disposed on the first surface of the substrate. The first capacitor is disposed on the second surface of the substrate.
Claims13
A semiconductor device, comprising:
- a substrate having a first surface and a second surface opposite to the first surface, wherein the first surface and the second surface of the substrate are a bottom surface and a top surface of the substrate respectively;
- a first word line embedded within the substrate and exposed from the second surface of the substrate, wherein a top surface of the first word line is coplanar with the second surface of the substrate;
- a bit line abutting the first surface of the substrate;
- and
- an isolation layer covered by the first word line, wherein the isolation layer is formed between two sidewalls of the first word line;
- wherein the first word line is spaced apart from the bit line by the isolation layer.
3 more elements
Dependencies are inferred from the claim text.