Imaging element and imaging device

An imaging device, comprising:

• a pixel including a plurality of photoelectric conversion sections that is formed on a semiconductor substrate and performs photoelectric conversion of incident light from a subject to generate a charge;
• an intra-pixel separator that is disposed in the pixel and separates the plurality of photoelectric conversion sections;
• an overflow path that is disposed in the intra-pixel separator and transfers charges overflowed in the plurality of photoelectric conversion sections to each other;
• an overflow gate that is disposed in the pixel and adjusts a potential of the overflow path, wherein at least a part of the overflow gate is embedded in the semiconductor substrate, and wherein the overflow path is disposed below the overflow gate;
• a pixel separator disposed at a boundary of the pixel;
• an image signal generating section that generates an image signal on a basis of the generated charge;
• a processing circuit that processes the generated image signal;
• and
• a separator including an insulating member embedded in the semiconductor substrate and disposed adjacent to a side surface of the overflow gate.

An imaging element, comprising:

• a pixel including a plurality of photoelectric conversion sections that is formed on a semiconductor substrate and performs photoelectric conversion of incident light from a subject to generate a charge;
• an intra-pixel separator that is disposed in the pixel and separates the plurality of photoelectric conversion sections;
• an overflow path that is disposed in the intra-pixel separator and transfers charges overflowed in the plurality of photoelectric conversion sections to each other;
• an overflow gate that is disposed in the pixel and adjusts a potential of the overflow path, wherein at least a part of the overflow gate is embedded in the semiconductor substrate, and wherein the overflow path is disposed below the overflow gate;
• a pixel separator disposed at a boundary of the pixel;
• a charge holding section that holds the generated charge;
• a plurality of charge transfer sections that is disposed one-by-one for the plurality of photoelectric conversion sections and transfers the generated charge to the charge holding section and causes the charge holding section to hold the charge;
• an image signal generating section that generates an image signal on a basis of the held charge;
• and
• a separator including an insulating member embedded in the semiconductor substrate and disposed adjacent to a side surface of the overflow gate.