FET driver circuit

A power switching system, comprising:

• a Silicon Carbide Junction field effect transistor (JFET) having a gate, a source, and a drain;
• a current buffer that includes a bipolar junction transistor connected across the gate and the source, the bipolar junction transistor having a base;
• and
• a gate driver circuit having a first circuit branch connected to the base of the bipolar junction transistor and a second circuit branch connected to the base of the bipolar junction transistor, wherein:
• the first circuit branch includes a first switch for opening and closing the first circuit branch;
• and
• the second circuit branch includes a second switch for opening and closing the second circuit branch and a current source.

A power switching system, comprising:

• a power transistor having a control terminal, a first transistor terminal, and a second transistor terminal;
• a current buffer that includes a first bipolar junction transistor connected across the control terminal and the first transistor terminal, wherein the current buffer further comprises a second bipolar junction transistor, wherein:
• the first bipolar junction transistor is a PNP bipolar junction transistor;
• the PNP bipolar junction transistor has a first base, a first collector, and a first emitter;
• the second bipolar junction transistor is an NPN bipolar junction transistor;
• the NPN bipolar junction transistor comprises a second collector, a second emitter and a second base;
• and
• the first emitter is connected to the second emitter;
• and
• a gate driver circuit having a first circuit branch connected to the first base of the first bipolar junction transistor and a second circuit branch connected to the first base of the first bipolar junction transistor, wherein:
• the first circuit branch includes a first switch for opening and closing the first circuit branch;
• and
• the second circuit branch includes a second switch for opening and closing the second circuit branch and a current source.