Plasma processing method and plasma processing apparatus

A plasma processing method performed by a plasma processing apparatus,

• wherein the plasma processing apparatus includes:
• a base;
• a ring support disposed on the base and having a ring support surface for supporting an annular member;
• a second heater configured to adjust a temperature of the annular member;
• a second temperature sensor configured to measure a temperature of the ring support surface;
• and
• a second electric power adjuster configured to adjust electric power supplied to the second heater, and
• wherein the plasma processing method comprises:
• setting the temperature of the ring support surface to a third temperature;
• supplying electric power from the second electric power adjuster to the second heater;
• before plasma is generated, when the temperature of the ring support surface measured by the second temperature sensor stabilizes at the third temperature, measuring third electric power supplied to the second heater by the second electric power adjuster;
• after the plasma is generated, when the temperature of the ring support surface measured by the second temperature sensor stabilizes at the third temperature, measuring fourth electric power supplied to the second heater by the second electric power adjuster;
• calculating an input heat quantity input from the plasma based on the third electric power and the fourth electric power;
• and
• correcting the third temperature to a fourth temperature based on the calculated input heat quantity and a thermal resistance between the ring support and the second temperature sensor or between the annular member and the second temperature sensor.

A plasma processing apparatus, comprising:

• a base;
• a substrate support disposed on the base and having a substrate support surface for supporting a substrate;
• a heater disposed inside the substrate support and configured to adjust a temperature of the substrate support surface;
• a temperature sensor configured to measure the temperature of the substrate support surface;
• an electric power adjuster configured to adjust electric power supplied to the heater;
• a plasma generator configured to generate plasma;
• and
• a controller,
• wherein the controller is configured to execute:
• setting the temperature of the substrate support surface to a first temperature;
• supplying electric power from the electric power adjuster to the heater;
• before the plasma is generated, when the temperature of the substrate support surface measured by the temperature sensor stabilizes at the first temperature, measuring first electric power supplied to the heater by the electric power adjuster;
• after the plasma is generated, when the temperature of the substrate support surface measured by the temperature sensor stabilizes at the first temperature, measuring second electric power supplied to the heater by the electric power adjuster;
• calculating an input heat quantity input from the plasma based on the first electric power and the second electric power;
• and
• correcting the first temperature to a second temperature based on the calculated input heat quantity and a thermal resistance between the substrate support and the temperature sensor or between the substrate and the temperature sensor.