Transmission electron microscope in-situ chip and preparation method therefor

A transmission electron microscope in-situ electrothermal coupling chip, structurally comprising a top chip and a bottom chip combined via a metal bonding layer, the top chip and the bottom chip each comprising a front side and a back side, the front side of the top chip being directly bonded to the front side of the bottom chip via the metal bonding layer to be self-sealed to form a chamber, and the top chip and the bottom chip being each made of a silicon substrate with silicon nitride or silicon oxide on two sides, wherein

• a structure of the top chip is, from the front side to the back side, a first silicon nitride layer or a first silicon oxide layer, the silicon substrate of the top chip, a second silicon nitride layer or a second silicon oxide layer, a first central window is located in a center of the top chip and penetrates through the first silicon nitride layer or the first silicon oxide layer on the front side of the top chip and the silicon substrate of the top chip, and two sample injection ports are disposed symmetrically with respect to the first central window and penetrate through an entirety of the top chip;
• a structure of the bottom chip is, from the front side to the back side, an electrode material layer, a transition layer, a third silicon nitride layer or a third silicon oxide layer, a heating layer, an insulating layer, a fourth silicon nitride layer or a fourth silicon oxide layer, the silicon substrate of the bottom chip, and a fifth silicon nitride layer or a fifth silicon oxide layer;
• a second central window is located in a center of the bottom chip and formed by etching the silicon substrate of the bottom chip and the fifth silicon nitride layer or the fifth silicon oxide layer away to reserve the fourth silicon nitride layer or the fourth silicon oxide layer on the front side of the bottom chip;
• the heating layer is provided with four contact electrodes and an annular heating wire, the four contact electrodes are disposed at an edge of the transmission electron microscope in-situ electrothermal coupling chip, the annular heating wire comprises a plurality of series-connected arc lines, the annular heating wire comprises two slits located at connections between the plurality of series-connected arc lines, a front end of a working electrode of the electrode material layer is disposed at one of the two slits that is located in a center of the second central window;
• and
• an area of the top chip is smaller than an area of the bottom chip, and the first central window of the top chip and the second central window of the bottom chip are aligned.