Device and method for testing memory

Device for testing a resistance-change memory cell, the device comprising:

• an electrically-conductive element configured to couple a cell under test to the testing device;
• a signal generator configured to generate signals for the writing into and for the reading from the cell;
• a first transmission line configured to couple the generator and the conductive element in a first configuration to transmit a first signal for the writing into the cell;
• a second transmission line, distinct from the first transmission line, configured to couple the generator and the conductive element in a second configuration to transmit a second signal for the reading from the cell;
• a first amplifier comprising as an input a detection resistor;
• an acquisition unit coupled to the output of the first amplifier;
• the detection resistor of the first amplifier being positioned on said second transmission line;
• and
• a switching module configured to couple, in the first configuration, the generator and the conductive element via the first transmission line and, in the second configuration, the generator and the conductive element via the second transmission line;
• the testing device is external to the cell, and is configured to determine a resistance value of the cell;
• wherein the resistance value of the cell is determined based on the second signal, on the value of the detection resistor, and on a third signal measured at the output of the first amplifier by the acquisition unit when the second signal is generated.