Programming complementary data non-volatile memory device and method

A method of operating a non-volatile memory device, wherein the non-volatile memory device includes a memory cell which stores one of first data and second data, and which comprises a first sub-memory cell connected to a first word line and a first bit line and a second sub-memory cell connected to a second word line and a second bit line, a source line shared by the first sub-memory cell and the second sub-memory cell, and a sense amplifier connected to the first bit line and the second bit line which reads data stored in the memory cell, the method comprising:

• programming the first sub-memory cell of a memory cell and erasing the second sub-memory cell of the memory cell in response to a command for storing first data in the memory cell,
• wherein the programming the first sub-memory cell and the erasing the second sub-memory cell of the memory cell comprise:
• applying a first voltage to the first word line and applying a second voltage different from the first voltage to the second word line, such that the first sub-memory cell is programmed;
• and
• applying a third voltage different from the first voltage to the first bit line and applying a fourth voltage different from the third voltage to the second bit line, such that the second sub-memory cell is erased.

A method of operating a non-volatile memory device, the method comprising:

• applying a read word line voltage to first and second word lines, in response to a read command for reading first data stored in a memory cell,
• wherein the memory cell stores first data, and comprises a first sub-memory cell connected to the first word line and a first bit line, and a second sub-memory cell connected to the second word line and a second bit line,
• wherein the first sub-memory cell and the second sub-memory cell share a source line, the first sub-memory cell is programmed, and the second sub-memory cell is erased;
• applying a read bit line voltage to the first and second bit lines;
• applying a read source line voltage to the source line;
• receiving a first current from the first bit line;
• receiving a second current from the second bit line;
• and
• reading the first data stored in the memory cell by comparing magnitudes of the first current and the second current,
• wherein the magnitude of the first current is different from the magnitude of the second current, and
• programming of the first sub-memory cell comprises:
• applying a first voltage to the first word line;
• applying a second voltage different from the first voltage to the second word line;
• applying a third voltage to the first bit line;
• and
• applying a fourth voltage different from the third voltage to the second bit line.