Driving circuit having floating processing transistor, and display device

A driving circuit, comprising a pull-up node noise reduction circuit, an input circuit, a first output noise reduction circuit and a pull-down node noise reduction circuit;

• wherein
• the pull-up node noise reduction circuit is electrically connected to a pull-up node, a pull-up node noise reduction control terminal and a first voltage terminal, and the pull-up node noise reduction circuit is configured to control to connect the pull-up node and the first voltage terminal under the control of a pull-up node noise reduction control signal provided by the pull-up node noise reduction control terminal;
• the input circuit is electrically connected to an input terminal and the pull-up node respectively, and is configured to control a potential of the pull-up node under the control of an input signal provided by the input terminal;
• the first output noise reduction circuit is electrically connected to a pull-down node, an output terminal and a second voltage terminal respectively, and is configured to connect the output terminal and the second voltage terminal under the control of a potential of the pull-down node;
• the pull-down node noise reduction circuit is electrically connected to the pull-down node, the pull-down node noise reduction control terminal and a third voltage terminal respectively, and is configured to control to connect the pull-down node and the third voltage terminal under the control of a pull-down node noise reduction control signal provided by the pull-down node noise reduction control terminal;
• at least one transistor comprised in the driving circuit is a floating processing transistor, the floating processing transistor comprises a floating electrode, a gate electrode, a first electrode and a second electrode;
• the floating electrode and at least one of the first electrode and the second electrode of the floating processing transistor are arranged in a same layer;
• the floating electrode is arranged between the first electrode and the second electrode of the floating processing transistor, and the floating electrode has no electrical signal input;
• a shortest distance between the first electrode of the floating processing transistor and the second electrode of the floating processing transistor is greater than an initial distance;
• wherein the pull-down node noise reduction circuit comprises an eighth transistor, a ninth transistor, a tenth transistor, and an eleventh transistor;
• the pull-down node comprises a first pull-down node and a second pull-down node;
• the pull-down node noise reduction control terminal comprises the pull-up node and the input terminal;
• a gate electrode of the eighth transistor is electrically connected to the pull-up node, a first electrode of the eighth transistor is electrically connected to the first pull-down node, and a second electrode of the eighth transistor is electrically connected to the third voltage terminal;
• a gate electrode of the ninth transistor is electrically connected to the input terminal, a first electrode of the ninth transistor is electrically connected to the first pull-down node, and a second electrode of the ninth transistor is electrically connected to the third voltage terminal;
• a gate electrode of the tenth transistor is electrically connected to the pull-up node, a first electrode of the tenth transistor is electrically connected to the second pull-down node, and a second electrode of the tenth transistor is electrically connected to the third voltage terminal;
• a gate electrode of the eleventh transistor is electrically connected to the input terminal, a first electrode of the eleventh transistor is electrically connected to the second pull-down node, and a second electrode of the eleventh transistor is electrically connected to the third voltage terminal;
• at least one of the eighth transistor, the ninth transistor, the tenth transistor, and the eleventh transistor is a floating processing transistor.