Methods for optical proximity correction and methods of manufacturing semiconductor devices having the same

A method for optical proximity correction, comprising:

• inputting curved layout data corresponding to a target layer to be formed;
• performing manhattanization based on the curved layout data and acquiring manhattanized data;
• performing a simulation for correcting an optical proximity effect using the manhattanized data;
• and
• acquiring design data for forming the target layer without modifying the curved layout data based on the simulation result;
• and
• wherein after performing the simulation, the optical proximity correction (OPC) is performed based on an overlap score calculated between a contour of the OPC model and a layer that is adjacent to the target layer.

A method of manufacturing a semiconductor device, comprising:

• performing manhattanization on curved layout data for a target layer, and performing optical proximity correction (OPC) based on the manhattanized data;
• acquiring design data based on the performed optical proximity correction;
• and
• forming a photoresist pattern on a substrate using a photomask manufactured based on the design data,
• wherein the optical proximity correction further includes calculating an overlap score between a contour of the OPC model and a layer that is adjacent to the target layer, and adjusting the OPC model using the calculated overlap score.