Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device

An actinic ray-sensitive or radiation-sensitive resin composition comprising:

• an acid-decomposable resin including a repeating unit having an acid-decomposable group in which an acid group having a pKa of 13 or less is protected by a leaving group that leaves by an action of an acid;
• and
• one or more compounds that generate an acid upon irradiation with actinic rays or radiation, which are selected from a compound (I) and a compound (II),
• wherein a content of the acid-decomposable resin is 10% by mass or more with respect to a total solid content of the composition,
• a content of the compounds that generate an acid upon irradiation with actinic rays or radiation is 10% by mass or more with respect to the total solid content of the composition,
• the acid-decomposable resin has a halogen atom in a repeating unit other than a repeating unit having a group that generates an acid upon irradiation with actinic rays or radiation,
• and
• the acid-decomposable resin does not have a repeating unit having a hexafluoroisopropanol group,
• compound (I):
• a compound having one or more sites of the following structural site X and one or more sites of the following structural site Y, the compound generating an acid including the following first acidic site derived from the following structural site X and the following second acidic site derived from the following structural site Y upon irradiation with actinic rays or radiation,
• structural site X:
• a structural site which consists of an anionic site A1− and a cationic site M1+, and forms a first acidic site represented by HA1 upon irradiation with actinic rays or radiation,
• structural site Y:
• a structural site which consists of an anionic site A2 and a cationic site M2+, and forms a second acidic site represented by HA2 upon irradiation with actinic rays or radiation,
• the anionic site A2− is selected from the group consisting of Formulae (BB-1) to (BB-3) and (BB-5),
• provided that the compound (I) satisfies the following condition I,
• condition I:
• a compound PI formed by substituting the cationic site M1+ in the structural site X and the cationic site M2+ in the structural site Y with H+ in the compound (I) has an acid dissociation constant a1 derived from an acidic site represented by HA1, formed by substituting the cationic site M1+ in the structural site X with H+, and an acid dissociation constant a2 derived from an acidic site represented by HA2, formed by substituting the cationic site M2+ in the structural site Y with H+, and the acid dissociation constant a2 is larger than the acid dissociation constant a1,
• compound (II):
• a compound having two or more sites of the structural site X and one or more sites of the following structural site Z, the compound that generates an acid including two or more sites of the first acidic site derived from the structural site X and the structural site Z upon irradiation with actinic rays or radiation,
• structural site Z:
• a nonionic site capable of neutralizing an acid.