Crack detector for semiconductor dies

An assembly for detecting a presence of a structural defect in a semiconductor die, comprising:

• a defect-detection sensor including:
• a plurality of first resistive paths of electrical-conductive material in the semiconductor die, each first resistive path of the plurality of resistive paths having a respective first end and a respective second end and each first resistive path of the plurality of first resistive paths extending in a respective region of the semiconductor die proximate a perimeter of the semiconductor die and partially encircling an interior portion of the semiconductor die;
• and
• a plurality of signal-generation stages in the semiconductor die, each signal-generation stage of the plurality of signal-generation stages is electrically coupled to the first end of a first respective resistive path of the plurality of first resistive paths and is configured to supply a respective test signal to the first respective resistive path;
• a plurality of second resistive paths each coupled between a respective signal generation stage and a respective second end;
• a plurality of switches each coupled between a respective second resistive path and the corresponding second end and configured to open during testing of the corresponding first resistive path;
• and
• a microcontroller in the semiconductor die and operatively coupled to the plurality of signal-generation stages and configured to:
• control the plurality signal-generation stages to generate a plurality of test signals;
• receive the plurality of test signals of the plurality of resistive paths;
• test an electrical feature of the plurality of first resistive paths by performing an analysis on the plurality of test signals;
• and
• detect the presence of the structural defect in the semiconductor die based on a result of the analysis on the plurality of test signals.