Silicon carbide wafer and method of fabricating the same
AssigneeGlobalWafers Co., Ltd.
InventorsChing-Shan Lin, Chien-Cheng Liou, Jian-Hsin Lu
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Abstract
A silicon carbide wafer and a method of fabricating the same are provided. In the silicon carbide wafer, a ratio (V:N) of a vanadium concentration to a nitrogen concentration is in a range of 2:1 to 10:1, and a portion of the silicon carbide wafer having a resistivity greater than 1012 Ω·cm accounts for more than 85% of an entire wafer area of the silicon carbide wafer.
Claims3
A silicon carbide wafer, wherein in the silicon carbide wafer, a ratio (V:N) of a vanadium concentration to a nitrogen concentration is in a range of 8:1 to 10:1, and a portion of the silicon carbide wafer having a resistivity greater than 1012 Ω·cm accounts for more than 85% of an entire wafer area of the silicon carbide wafer,
- wherein in the silicon carbide wafer, the nitrogen concentration is within a range of 5.5*1016 atom/cm3 to 9.3*1016 atom/cm3, and the vanadium concentration is within a range of 5*1017 atom/cm3 to 9.05*1017 atom/cm3.
A silicon carbide wafer, wherein in the silicon carbide wafer, a ratio (V:N) of a vanadium concentration to a nitrogen concentration is in a range of 8:1 to 10:1, and a portion of the silicon carbide wafer having a resistivity greater than 1012 Ω·cm accounts for 100% of an entire wafer area of the silicon carbide wafer,
- wherein in the silicon carbide wafer, the nitrogen concentration is within a range of 5.5*1016 atom/cm3 to 9.3*1016 atom/cm3, and the vanadium concentration is within a range of 5*1017 atom/cm3 to 9.05*1017 atom/cm3, and
- the vanadium concentration within the range of 5*1017 atom/cm3 to 9.05*1017 atom/cm3 is achieved by using vanadium gas for doping during fabrication of the silicon carbide wafer.
Dependencies are inferred from the claim text.