Method for preparing large-scale two-dimensional single crystal stack having interlayer rotation angle

A method for preparing a two-dimensional single crystal material stack having an interlayer rotation angle α, wherein the method includes the following steps:

• S1. providing a single crystal substrate stack with the interlayer rotation angle α;
• the single crystal substrate stack includes first and second single crystal substrate which are stacked, wherein the first single crystal substrate is located under the second single crystal substrate;
• the second single crystal substrate is rotated by the interlayer rotation angle α relative to the first single crystal substrate so that a first crystal orientation of the first single crystal substrate and a second crystal orientation of the second single crystal substrate have the interlayer rotation angle, wherein the first crystal orientation of the first single crystal substrate and the second crystal orientation of the second single crystal substrate are the same in crystal orientation;
• S2. growing two-dimensional single crystal materials respectively on the opposite surfaces between the two single crystal substrates in the single crystal substrate stack;
• that is, a first two-dimensional single crystal material is grown on an upper surface of the first single crystal substrate, and a second two-dimensional single crystal material is grown on a lower surface of the second single crystal substrate, so that the first two-dimensional single crystal material also has the interlayer rotation angle α relative to the second two-dimensional single crystal material;
• S3. attaching the first two-dimensional single crystal material to the second two-dimensional single crystal material;
• and
• S4. removing the second single crystal substrate, thereby obtaining the two-dimensional single crystal material stack having the interlayer rotation angle α.