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US 12,612,423 B2Granted
Compounds and processes for extreme ultraviolet lithography
AssigneeEntegris, Inc.
InventorsDavid M. Ermert, Thomas M. Cameron
Life of this patent
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Abstract
The present disclosure includes the preparation of mixed-ligand compounds, such as tin(II) cyclopentadienylide complexes. The compounds of the present disclosure can be used as atomic layer deposition (ALD) precursors for extreme ultraviolet (EUV) lithography. The compounds of the present disclosure can also be used as plasma chemical vapor deposition (CVD) precursors for EUV lithography.
Claims11
A cyclopentadienylide tin(II) compound of formula (I) comprising:
- wherein each R2 is independently hydrogen, a C1-C4 alkyl group, or a halide containing C1-C4 alkyl group,
- wherein
- and
- wherein R3-R7 is hydrogen or C1-C4 alkyl group.
1 more element
A method of forming a cyclopentadienylide tin(II) compound of formula (I):
- wherein each R2 is independently hydrogen, a CC1-C4 alkyl group, or a halide containing C1-C4 alkyl group,
- wherein
- wherein R3-R7 is hydrogen or C1-C4 alkyl group, and
- wherein the method comprises:
- contacting [Sn(N(R2)2)2]2 with Cp2Sn or CpH.
2 more elements
Dependencies are inferred from the claim text.