Ceramic electrode, assembly comprising the ceramic electrode, arrangement comprising the ceramic electrode, and method of manufacturing a ceramic electrode

A method of manufacturing a ceramic electrode, comprising the steps of:

• A Providing at least one first green sheet,
• B Forming a metal layer on a first surface of the at least one first green sheet,
• C Forming a blank by applying a green sheet stack comprising second green sheets to the first surface,
• D Debinding of the blank, and
• E Sintering the blank, wherein the sintering forms a dielectric layer having a thickness from the first green sheet or sheets, wherein the thickness is less than or equal to 150 μm, wherein the metal layer partially covers said the surface of the dielectric layer, wherein a free area of the first surface of the dielectric layer is free of the metal layer and the green film stack is in contact with the free area, said free area having a width greater than or equal to the thickness of said dielectric layer, said width corresponding to an extension in lateral direction, wherein the dielectric layer comprises a ceramic material having a dielectric constant greater than or equal to 15000.

A method of manufacturing a ceramic electrode, comprising the steps of:

• A Providing a green sheet stack comprising second green sheets,
• B Structuring of the green sheet stack with formation of cavities and temporary support elements,
• C Forming a blank by applying at least a first green sheet to the structured green sheet stack, wherein a first surface of the first green sheet is in contact with the structured green sheet stack,
• D Debinding of the blank,
• E Sintering of the blank, said sintering forming a dielectric layer having a thickness from the first green sheet or sheets, the thickness (D) being less than or equal to 150 μm, and
• F Forming a metal layer on the first surface of the first green sheet, wherein a free area of the dielectric layer remains free of the metal layer, and forming a contact layer, wherein
• the green film stack is in contact with the free area, wherein the free area has a width greater than or equal to the thickness of said dielectric layer, said width corresponding to an extension in the lateral direction.

An assembly comprising a ceramic electrode arranged on a flexible board, the ceramic electrode including:

• a support element as a mechanically stabilizing component,
• a dielectric layer having a thickness less than or equal to 150 μm, and
• an electrode layer
• arranged on and partially covering a first surface of said dielectric layer, a free area of the first surface of the dielectric layer being free of the electrode layer and the support element being in contact with this free area, the free area having a width greater than or equal to the thickness of the dielectric layer, wherein the width corresponds to an extension in the lateral direction.

A method of manufacturing a ceramic electrode arranged on a flexible board, the method comprising the steps of:

• A Providing at least one first green sheet,
• B Forming a metal layer on a first surface of the at least one first green sheet,
• C Forming a blank by applying a green sheet stack comprising second green sheets to the first surface,
• D Debinding of the blank, and
• E Sintering the blank, wherein the sintering forms a dielectric layer having a thickness from the first green sheet or sheets, wherein the thickness is less than or equal to 150 μm, wherein the metal layer partially covers said the surface of the dielectric layer, wherein a free area of the first surface of the dielectric layer is free of the metal layer and the green film stack is in contact with the free area, said free area having a width greater than or equal to the thickness of said dielectric layer, said width corresponding to an extension in lateral direction.

A method of manufacturing a ceramic electrode, the method comprising the steps of:

• A Providing at least one first green sheet,
• B Forming a metal layer on a first surface of the at least one first green sheet,
• C Forming a blank by applying a green sheet stack comprising second green sheets to the first surface,
• D Debinding of the blank, and
• E Sintering the blank, wherein the sintering forms a dielectric layer having a thickness from the first green sheet or sheets, wherein the thickness is less than or equal to 150 μm, wherein the metal layer partially covers said the surface of the dielectric layer, wherein a free area of the first surface of the dielectric layer is free of the metal layer and the green film stack is in contact with the free area, said free area having a width greater than or equal to the thickness of said dielectric layer, said width corresponding to an extension in lateral direction,
• wherein the green sheet stack comprises a cavity in which, after sintering, a contact layer is formed, which contacts the metal layer, and
• wherein the cavity is filled with a polymer paste prior to the application of the green sheet stack, which is removed by debinding and/or sintering.