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US 12,610,846 B2Granted
Semiconductor encapsulation method and semiconductor encapsulation structure
AssigneeCR Runan Technologies (Chongqing) Co. Ltd.
InventorJimmy Chew
Life of this patent
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Abstract
A semiconductor encapsulation method, comprising: forming a protection layer on a front side of a chip to be encapsulated; arranging said chip, with the protection layer being formed on the front side thereof, on a carrier plate, wherein the front side of said chip faces upwards and a back side thereof faces the carrier plate; and encapsulating, on the carrier plate, said chip and the protection layer to form a plastic encapsulation layer. Further provided is a semiconductor encapsulation structure.
Claims11
A semiconductor packaging method, comprising:
- forming a protective layer on a front side of a chip to be packaged, wherein the protective layer is made of an organic-inorganic composite material;
- attaching the chip to be packaged, with the protective layer formed on the front side thereof, to a carrier substrate in such a manner that the front side of the chip to be packaged faces upward and a back side of the chip to be packaged faces the carrier substrate;
- and
- forming a plastic encapsulation layer to entirely encapsulate the chip to be packaged and the protective layer on the carrier substrate,
- wherein the plastic encapsulation layer is made of an organic-inorganic composite material, the organic-inorganic composite material of the protective layer and the organic-inorganic composite material of the plastic encapsulation layer each comprising an organic material and filler particles dispersed in the organic material, the organic-inorganic composite material of the protective layer is able to effectively mitigate discrepancies between the chip to be packaged and the protective layer in terms of material properties,
- wherein the filler particles in the protective layer and the filler particles in the plastic encapsulation layer are each made of an inorganic material and are spherical, a particle size of the filler particles in the protective layer is smaller than a particle size of the filler particles in the plastic encapsulation layer,
- wherein the filler particles in the protective layer are present at an amount ranging from 50 w.t. % to 95 w.t. %, which enables the protective layer to be closer to silicon in terms of the material properties.
4 more elements
Dependencies are inferred from the claim text.