Method for forming semiconductor packages using dielectric alignment marks and laser liftoff process
AssigneeTokyo Electron Limited
InventorsKevin Ryan, Hirokazu Aizawa, Kaoru Maekawa, Satohiko Hoshino, Yoshihiro Tsutsumi
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Abstract
A method for making forming a semiconductor package comprises forming a plurality of alignment marks in or on a carrier substrate; positioning and bonding a plurality of semiconductor dies to the carrier substrate based on the plurality of alignment marks; further processing the plurality of semiconductor dies into a reconstituted wafer; and decoupling the reconstituted wafer from the carrier substrate at an interface using a laser source. The alignment marks are interposed between the interface and the laser source.
Claims20
A method comprising:
- forming a first dielectric layer to provide a plurality of alignment marks in or on a first surface of a carrier substrate;
- forming a second dielectric layer over the plurality of alignment marks;
- forming a third dielectric layer over the second dielectric layer;
- positioning and bonding a plurality of semiconductor dies to the carrier substrate based on the plurality of alignment marks;
- further processing the plurality of semiconductor dies into a reconstituted wafer;
- and
- decoupling the reconstituted wafer from the carrier substrate at an interface between the first surface and the second dielectric layer using a laser source to pass a laser through the plurality of alignment marks between the interface and the laser source.
A method comprising:
- forming a first dielectric layer into a plurality of alignment marks upon a surface of a carrier substrate;
- forming a second dielectric layer above the plurality of alignment marks;
- forming a third dielectric layer above the second dielectric layer,
- positioning and bonding a plurality of semiconductor dies onto the carrier substrate based on the plurality of alignment marks;
- further processing the plurality of semiconductor dies into a reconstituted wafer;
- decoupling the reconstituted wafer and the third dielectric layer from the carrier substrate at an interface between the surface and the second dielectric layer using a laser liftoff (LLO) process;
- and
- removing the third dielectric layer to expose the plurality of semiconductor dies.
A method comprising:
- forming a first dielectric layer to provide a plurality of alignment marks upon a surface of a carrier substrate;
- forming a second dielectric layer over the plurality of alignment marks;
- forming a third dielectric layer over the second dielectric layer;
- positioning a plurality of semiconductor dies onto the carrier substrate based on the plurality of alignment marks, such that a release interface is positioned between the surface of the carrier substrate and the second dielectric layer;
- further processing the plurality of semiconductor dies into a reconstituted wafer;
- decoupling the reconstituted wafer from the carrier substrate at the release interface using a laser directed at the release interface;
- and
- exposing a bonding surface of the reconstituted wafer.
Dependencies are inferred from the claim text.