Method for manufacturing semiconductor device including forming opening in resist of the semiconductor device

A method for manufacturing a semiconductor device, the method comprising:

• providing a semiconductor element having electrode terminals;
• forming a resist on the semiconductor element, the resist having a first surface facing the electrode terminals and a second surface opposite to the first surface;
• forming an opening in the resist, which covers the electrode terminals, by inserting protrusions of a mold into the resist above the electrode terminals;
• curing the resist by applying energy to the resist;
• and
• widening the opening in a radial direction of the opening,
• wherein:
• the curing of the resist is performed in a state where the second surface of the resist faces an inner surface of the mold with a gap between the second surface of the resist and the inner surface of the mold;
• and
• in the forming of the opening in the resist, a raised portion of the resist is formed along an opening peripheral edge of the opening.