Structure including a photoresist underlayer and method of forming same
AssigneeASM IP Holding B.V.
InventorsYiting Sun, David de Roest, Daniele Piumi, Ivo Johannes Raaijmakers, BokHeon Kim, Timothee Blanquart, Yoann Tomczak
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Abstract
Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer using one or more of plasma-enhanced cyclic (e.g., atomic layer) deposition and plasma-enhanced chemical vapor deposition. Surface properties of the photoresist underlayer can be manipulated using a treatment process.
Claims20
A method including a pre-treatment for a photoresist deposition step, the method comprising the steps:
- providing a substrate to a reaction chamber, the substrate comprising a top material layer comprising amorphous carbon or spin on carbon or a self-assembled monolayer;
- using a plasma-enhanced cyclic process, depositing an underlayer having a thickness of less than 5 nm directly on the top material layer;
- forming a photoresist layer adhered and in direct contact with the underlayer;
- and
- removing all of the underlayer material remaining after etching the top material layer,
- wherein the underlayer has a surface energy having a polar part and a dispersive part, wherein polar part of the surface energy is from at least 3 mN/m to at most 13 mN/m.
A method of forming a structure, the method comprising the steps of:
- providing a substrate;
- forming a photoresist underlayer directly overlying a material layer on a surface of the substrate;
- forming a photoresist layer overlying and adhered to and in direct contact with the photoresist underlayer;
- and
- removing all of the underlayer material remaining after etching the material layer,
- wherein the photoresist underlayer is formed using one or more of plasma-enhanced atomic layer deposition and plasma-enhanced chemical vapor deposition;
- wherein the photoresist underlayer comprises a bilayer comprising a lower underlayer part and an upper underlayer part, the lower underlayer part comprising V, Cr, Mv, Fe, Co, Ni, Cu, Zr, Mo, Ru, Hf, Ta, W, B, Ge, As, Sb, or Te, or an oxide of Ti, Sr, Zn, Al, Ta, or Sn, or a nitride of Sr, Zn, Al, and Sn, and/or comprises a dopant selected from Cd, Ag, In, Sb, Sn I, Te, and Cs, and the upper underlayer part comprising silicon, oxygen, and carbon;
- wherein the photoresist layer comprises extreme ultraviolet (EUV) lithography photoresist;
- and,
- wherein a thickness of the photoresist underlayer is less than 5 nm.
Dependencies are inferred from the claim text.