Additives for grinding semiconductor workpieces
AssigneeWolfspeed, Inc.
InventorsSimon Bubel, Dinusha Priyadarshani Karunaratne
Life of this patent
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Abstract
Systems and methods for grinding semiconductor workpieces are provided. In one example, a method includes providing a surface of the semiconductor workpiece against a grinding apparatus. The grinding apparatus includes an abrasive surface. The method further includes imparting relative motion between the abrasive surface and the semiconductor workpiece to implement a grinding operation on the semiconductor workpiece. The method further includes providing a fluid to the surface of the semiconductor workpiece or the abrasive surface during the grinding operation. The fluid includes an additive. The additive includes one or more of an oxidizing agent, an etchant, a surfactant, or a lubricant.
Claims22
A method for grinding a silicon carbide semiconductor workpiece, comprising:
- providing a surface of the silicon carbide semiconductor workpiece against a grinding apparatus, the grinding apparatus comprising a grind wheel comprising an abrasive surface, the abrasive surface comprising abrasive elements comprising one or more of diamond, ceramic, metal nitride, metal oxide, metal carbide, metalloid nitride, metalloid oxide, metalloid carbide, carbon group nitride, carbon group oxide, or carbon group carbide;
- imparting relative motion between the abrasive surface and the silicon carbide semiconductor workpiece to implement a grinding operation on the silicon carbide semiconductor workpiece;
- and
- providing a fluid to the surface of the silicon carbide semiconductor workpiece or the abrasive surface during the grinding operation;
- wherein the fluid comprises an additive, the additive comprising one or more of an oxidizing agent, an etchant, a surfactant, or a lubricant,
- wherein the grinding operation reduces a thickness of the silicon carbide semiconductor workpiece by about 0.5 microns or greater, and
- wherein the fluid does not contain abrasive particles.
A method for grinding a silicon carbide semiconductor workpiece, comprising:
- providing a surface of the silicon carbide semiconductor workpiece against a grinding apparatus, the grinding apparatus comprising a grind wheel with a plurality of grinding teeth comprising an abrasive surface, the abrasive surface comprising abrasive elements comprising one or more of diamond, ceramic, metal nitride, metal oxide, metal carbide, metalloid nitride, metalloid oxide, metalloid carbide, carbon group nitride, carbon group oxide, or carbon group carbide;
- imparting relative motion between the abrasive surface and the silicon carbide semiconductor workpiece to implement a grinding operation on the silicon carbide semiconductor workpiece;
- and
- providing a fluid to the surface of the silicon carbide semiconductor workpiece or the abrasive surface during the grinding operation;
- wherein the fluid comprises an additive, the additive comprising one or more of an oxidizing agent, an etchant, a surfactant, or a lubricant,
- wherein the fluid does not contain abrasive particles,
- wherein the grinding operation reduces a thickness of the silicon carbide semiconductor workpiece by about 0.5 microns or greater, and
- wherein (a) the grind wheel comprises a plurality of grinding teeth arranged in a concentric ring about a center of the grind wheel, wherein there is a space between each of the grinding teeth;
- or (b) the additive is an actuatable additive, wherein the method comprises controlling an actuator to activate the actuatable additive during the grinding operation, and wherein the actuator comprises one or more of an electrostatic actuator, electrochemical actuator, acoustic actuator, ultrasonic actuator, thermal actuator, or plasma-based actuator.
Dependencies are inferred from the claim text.