Semiconductor structure and method for manufacturing semiconductor structure

A method for manufacturing a semiconductor structure, comprising:

• forming an epitaxial layer on a side of a growth substrate, wherein the epitaxial layer comprises a first transition layer, a protection layer and an active structure layer which are sequentially epitaxially formed on the side of the growth substrate;
• a surface, away from the growth substrate, of the first transition layer is a two-dimensional flat surface;
• on a first plane, an orthographic projection of the active structure layer is at least partially covered by an orthographic projection of the protection layer, and the first plane is perpendicular to an arrangement direction of the protection layer and the active structure layer;
• forming a transfer substrate on a side, away from the growth substrate, on the epitaxial layer;
• detaching the growth substrate by a laser lift-off process, wherein a detaching position is on the first transition layer, to make the epitaxial layer transferred to the transfer substrate;
• etching the first transition layer up to the protection layer, to make a surface, away from the active structure layer, of the protection layer to be a planarization surface;
• and
• wherein during a time window of the epitaxially forming the epitaxial layer, the first transition layer undergoes a crystal transformation process from a three-dimensional rough structure to a two-dimensional flat surface before forming the protection layer and the active structure layer sequentially on the first transition layer.