Perovskite photoelectric conversion semiconductor device
AssigneeIndustry-Academic Cooperation Foundation, Kunsan National University
InventorJungYup Yang
Life of this patent
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Abstract
Disclosed herein is a perovskite photoelectric conversion semiconductor device. A perovskite photoelectric conversion semiconductor device includes a substrate, a first electrode formed on the substrate, an electron transport layer formed on the first electrode, a perovskite light absorbing semiconductor layer formed on the electron transport layer, a hole transport layer formed on the perovskite light absorbing semiconductor layer, and a second electrode formed on the hole transport layer, a first pitch is formed in the first electrode, a second pitch is formed in the electron transport layer, the perovskite light absorbing semiconductor layer, and the hole transport layer, and the electron transport layer includes an electron transport layer residue in the second pitch.
Claims13
A perovskite photoelectric conversion semiconductor device comprising:
- a substrate;
- a first electrode formed on the substrate;
- an electron transport layer formed on the first electrode;
- a perovskite light absorbing semiconductor layer formed on the electron transport layer;
- a hole transport layer formed on the perovskite light absorbing semiconductor layer;
- and
- a second electrode formed on the hole transport layer,
- wherein a first pitch is formed in the first electrode,
- a second pitch is formed in the electron transport layer, the perovskite light absorbing semiconductor layer, and the hole transport layer, and
- the electron transport layer comprises an electron transport layer residue in the second pitch.
Dependencies are inferred from the claim text.