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US 12,610,658 B2Granted
High efficient micro devices
AssigneeVueReal Inc.
InventorsGholamreza Chaji, Ehsanollah Fathi, Hossein Zamani Siboni
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Abstract
The present disclosure relates to a solid state micro device structure that has a microdevice formed on a substrate, with p and n doped layers, active layers between at least the two doped layers, pads coupled to each doped layer, and wherein the n-doped layer is modulated to have a lower conductivity towards an edge of the device. The invention further involves, dielectric layer, conductive layer, passivation layer and MIS structure.
Claims26
A solid state microdevice structure comprising:
- a microdevice formed on a substrate, the microdevice comprising;
- a plurality of doped layers including at least a p doped layer and an n doped layer;
- active layers disposed between the plurality of doped layers wherein a first doped layer of the plurality of doped layers is coupled to, smaller than, and disposed within a perimeter of a first side of the active layers, and a second doped layer of the plurality of doped layers is coupled to a second side of the active layers, the first side of the active layers opposite the second side of the active layers;
- a VIA connecting one side of the microdevice structure to another side;
- and
- a plurality of pads including a first pad coupled to the first doped layer of the plurality of doped layers, a second pad coupled to one end of the VIA, and a third pad coupled to the other end of the VIA and disposed within a region of the microdevice structure located on the second side of the active layers and other than in contact with the first pad,
- wherein the VIA other than passes though the portion of the first doped layer coupled to the first pad.
4 more elements
Dependencies are inferred from the claim text.