Semiconductor structure and method for manufacturing same
AssigneeChangxin Memory Technologies, Inc.
InventorMin Li
Life of this patent
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Abstract
A semiconductor structure and a method for manufacturing same are provided. The semiconductor structure includes: a substrate, and a first transistor and a second transistor protruding from the substrate. The first transistor at least includes a first doped region and a second doped region arranged from bottom to top. The second transistor at least includes a third doped region and a fourth doped region arranged from bottom to top. Herein, the first doped region and the third doped region have a first conductivity type, the second doped region and the fourth doped region have a second conductivity type, and a breakdown voltage of the first transistor is smaller than a breakdown voltage of the second transistor.
Claims14
A semiconductor structure, comprising:
- a substrate;
- a first transistor and a second transistor protruding from the substrate, wherein the first transistor at least comprises a first doped region and a second doped region arranged from bottom to top, the second transistor at least comprises a third doped region and a fourth doped region arranged from bottom to top,
- wherein the first doped region and the third doped region have a first conductivity type, the second doped region and the fourth doped region have a second conductivity type, and a breakdown voltage of the first transistor is smaller than a breakdown voltage of the second transistor and a height of a structure composed of the first doped region and the second doped region is smaller than a height of a structure composed of the third doped region and the fourth doped region, a height of the first doped region is smaller than a height of the third doped region, and a height of the second doped region is the same as that of the fourth doped region.
Dependencies are inferred from the claim text.