Diode, power reception device and power transmission system

A power reception device, comprising:

• a power reception circuit for receiving a high-frequency radio wave,
• the power reception circuit having a rectifier diode for converting a high-frequency radio wave into direct current,
• the rectifier diode being
• a diode, comprising:
• an undoped GaN layer,
• an AlxGa1-xN layer (0<x<1) on the undoped GaN layer,
• a Mg-doped p-type InyGa1-yN layer (0<y<1) having an island-like shape on the AlxGa1-xN layer,
• a metal electrode which is provided on the whole surface of the p-type InyGa1-yN layer and which is in contact with the p-type InyGa1-yN layer,
• an anode electrode which is provided on the AlxGa1-xN layer such that the anode electrode extends from the AlxGa1-xN layer on the metal electrode and which is electrically connected to the metal electrode;
• and
• a cathode electrode which is provided on a part of the AlxGa1-xN layer which is located on the opposite side from the anode electrode with respect to the p-type InyGa1-yN layer,
• 0.1<x<0.3
• 10 [nm]<tAl<40 [nm]
• 0.05<y<0.25
• 2 [nm]<tIn<20 [nm]
• 1×1019 [cm−3]<[Mg]<1×1021 [cm−3]
• being satisfied when the thickness of the AlxGa1-xN layer is denoted as tAl, the thickness of the p-type InyGa1-yN layer is denoted as tin and the Mg concentration of the p-type InyGa1-yN layer is denoted as [Mg],
• a two-dimensional electron gas being formed in the undoped GaN layer in the vicinity part of a hetero-interface between the AlxGa1-xN layer and the undoped GaN layer except a part below the p-type InyGa1-yN layer and the two-dimensional electron gas being depleted to form the depletion region in the part below the p-type InyGa1-yN layer at a non-operating time,
• 0 [V]<Von<1.0 [V] being satisfied when the forward turn-on voltage is denoted as Von.

A power transmission system, comprising:

• a power transmission circuit for transmitting a high-frequency radio wave;
• and
• a power reception circuit for receiving a high-frequency radio wave,
• the power reception circuit having a rectifier diode for converting a high-frequency radio wave into direct current,
• the rectifier diode being
• a diode, comprising:
• an undoped GaN layer,
• an AlxGa1-xN layer (0<x<1) on the undoped GaN layer,
• a Mg-doped p-type InyGa1-yN layer (0<y<1) having an island-like shape on the AlxGa1-xN layer,
• a metal electrode which is provided on the whole surface of the p-type InyGa1-yN layer and which is in contact with the p-type InyGa1-yN layer,
• an anode electrode which is provided on the AlxGa1-xN layer such that the anode electrode extends from the AlxGa1-xN layer on the metal electrode and which is electrically connected to the metal electrode;
• and
• a cathode electrode which is provided on a part of the AlxGa1-xN layer which is located on the opposite side from the anode electrode with respect to the p-type InyGa1-yN layer,
• 0.1<x<0.3
• 10 [nm]<tAl<40 [nm]
• 0.05<y<0.25
• 2 [nm]<tIn<20 [nm]
• 1×1019 [cm−3]<[Mg]<1×1021 [cm−3]
• being satisfied when the thickness of the AlxGa1-xN layer is denoted as tAl, the thickness of the p-type InyGa1-yN layer is denoted as tin and the Mg concentration of the p-type InyGa1-yN layer is denoted as [Mg],
• a two-dimensional electron gas being formed in the undoped GaN layer in the vicinity part of a hetero-interface between the AlxGa1-xN layer and the undoped GaN layer except a part below the p-type InyGa1-yN layer and the two-dimensional electron gas being depleted to form the depletion region in the part below the p-type InyGa1-yN layer at a non-operating time,
• 0 [V]<Von<1.0 [V] being satisfied when the forward turn-on voltage is denoted as Von.