Treatment of electrodes of MIM capacitors
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShin-Hung Tsai, Cheng-Hao Hou, Da-Yuan Lee, Chi On Chui
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Abstract
A method includes forming a first electrode, performing a first treatment process on a first oxide layer over the first electrode, wherein the first treatment process is performed using a first process gas comprising ammonia, depositing a high-k dielectric layer over the first oxide layer, forming a second electrode over the high-k dielectric layer, forming a first contact plug electrically connecting to the first electrode, and forming a second contact plug electrically connecting to the second electrode.
Claims20
A method comprising:
- forming a first electrode;
- performing a first treatment process on a first oxide layer over the first electrode using a first process gas, wherein the first process gas comprises nitrogen (N2);
- after the first treatment process, performing a second treatment process on the first oxide layer, wherein the second treatment process is performed using a second process gas comprising ammonia;
- depositing a high-k dielectric layer over the first oxide layer;
- forming a second electrode over the high-k dielectric layer;
- forming a first contact plug electrically connecting to the first electrode;
- and
- forming a second contact plug electrically connecting to the second electrode.
A method comprising:
- forming a capacitor comprising:
- forming a first capacitor electrode on a wafer, wherein the first capacitor electrode comprises a metal nitride;
- forming an oxide layer over the first capacitor electrode;
- performing a first treatment process on the oxide layer using a first process gas comprising nitrogen (N2);
- performing a second treatment process on the oxide layer using a second process gas comprising ammonia (NH3), wherein the first treatment process and the second treatment process convert the oxide layer as a nitrogen-rich oxide layer;
- forming a dielectric layer over the nitrogen-rich oxide layer;
- and
- forming a second capacitor electrode over the dielectric layer.
A method comprising:
- depositing a first titanium nitride layer;
- patterning the first titanium nitride layer to form a first electrode, wherein a first titanium oxide layer is formed at a top surface of the first titanium nitride layer;
- performing a plasma treatment process on the first titanium oxide layer using a first process gas comprising nitrogen (N2);
- after the plasma treatment process, performing a nitridation process to increase a nitrogen atomic percentage in the first titanium oxide layer;
- forming a high-k dielectric layer over the first titanium oxide layer;
- and
- forming a second capacitor electrode over the high-k dielectric layer.
Dependencies are inferred from the claim text.