Method for etching film and plasma processing apparatus

An etching apparatus comprising:

• a chamber;
• a substrate support disposed in the chamber;
• one or more heaters disposed in the substrate support;
• a heater controller configured to adjust an electric power individually provided to the one or more heaters;
• a gas supply;
• a plasma generator;
• a controller configured to perform an etching process comprising a plurality of cycles,
• wherein the controller, during at least one cycle of the plurality of cycles, is configured to:
• control the gas supply to supply a precursor into the chamber, thereby forming a precursor layer on a substrate supported by the substrate support, the substrate including a film and a mask;
• and
• control the gas supply, the plasma generator and the heater controller to supply a process gas into the chamber and generate a plasma from the process gas in the chamber while maintaining the substrate support at a first temperature, thereby etching the film through the mask;
• wherein the controller, during at least one other cycle of the plurality of cycles, is configured to:
• control the gas supply to supply a precursor into the chamber, thereby forming a precursor layer on the substrate;
• and
• control the gas supply, the plasma generator and the heater controller to supply a process gas into the chamber and generate a plasma from the process gas in the chamber while maintaining the substrate support at a second temperature different from the first temperature, thereby etching the film through the mask,
• wherein the controller is configured to, in the at least one other cycle, etch the film at a position deeper than a position in a depth direction of the film etched in the at least one cycle, and
• wherein the heater controller is configured to control the temperature of the substrate during the execution of the etching the film included in the at least one other cycle to be higher than the temperature of the substrate during the execution of the etching the film included in the at least one cycle.