Film capacitor having nitrogen atom aggregation regions
AssigneeMurata Manufacturing Co., Ltd.
InventorsShunsuke Akiba, Tomomichi Ichikawa, Yumie Kawasaki, Kazuto Yamazaki
Life of this patent
Estimating the term…
Abstract
A film capacitor that includes: a dielectric resin film having a first surface and a second surface opposite each other; a first metal layer on the first surface; and a second metal layer on the second surface, wherein in a mapping image of nitrogen atoms observed by energy dispersive X-ray spectroscopy in a section of the dielectric resin film along a thickness direction of the dielectric resin film, a ratio of an area of nitrogen atom aggregation regions to an entire observation area is 35% or less.
Claims17
A film capacitor comprising:
- a dielectric resin film having a first surface and a second surface opposite each other;
- a first metal layer on the first surface;
- and
- a second metal layer on the second surface,
- wherein in a mapping image of nitrogen atoms observed by energy dispersive X-ray spectroscopy in a section of the dielectric resin film along a thickness direction of the dielectric resin film, a ratio of an area of nitrogen atom aggregation regions to an entire observation area is 35% or less.
A film capacitor comprising:
- a dielectric resin film having a first surface and a second surface opposite each other;
- a first metal layer on the first surface;
- and
- a second metal layer on the second surface,
- wherein in a mapping image of nitrogen atoms observed by energy dispersive X-ray spectroscopy in a section of the dielectric resin film along a thickness direction of the dielectric resin film, an average value of major axes of nitrogen atom aggregation regions is 220 nm or less.
Dependencies are inferred from the claim text.